Analysis: Science & Technology — 10 August 2026
Atomic Interface Enables Thinner 2D Transistors Researchers at National Yang Ming Chiao Tung University, working with TSMC, have engineered a 0.42-nanometer epitaxial aluminum oxide buffer layer between monolayer molybdenum disulfide and a high-κ hafnium oxide gate dielectric. Published in Nature Electronics and reported August 9, the approach yields short-channel top-gate transistors with ~1 nm equivalent … Read more